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Si4842BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0042 at V GS = 10 V
0.0057 at V GS = 4.5 V
I D (A) a
28
24
Q g (Typ.)
29 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? 100 % R g Tested
SO- 8
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
S
Orderin g Information: Si4 8 42BDY-T1-E3 (Lead (P b )-free)
Si4 8 42BDY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
28
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
23
20 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
16 b, c
60
5.6
2.7 b, c
35
61
A
mJ
T C = 25 °C
6.25
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
4.0
3.0 b, c
W
T A = 70 °C
1.9 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
32
15
42
20
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
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